Abstract
Presented are the first short wavelength (4.4-4.7 μm) QC-DFB lasers, targeted to the detection Co. They employ strained heterostructure material (InGaAs/AlInAs on InP, grown by molecular beam epitaxy) with global strain compensation to provide the large band offset needed for high performance at short wavelengths.
| Original language | English (US) |
|---|---|
| Pages | 264-265 |
| Number of pages | 2 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000 |
Other
| Other | Conference on Lasers and Electro-Optics (CLEO 2000) |
|---|---|
| City | San Francisco, CA, USA |
| Period | 5/7/00 → 5/12/00 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering