Single-electron Coulomb blockade in a nanometer field-effect transistor with a single barrier

The first experimental study of a new nanometer field-effect transistor with a single barrier in its one-dimensional channel is presented. At low temperatures and as charge density in the channel was varied, nine reproducible periodic oscillations of conductance, in addition to 2e²/h conductance plateaus, were observed before the onset of the first 2e ²/h conductance plateau. It was found experimentally that each conductance oscillation corresponds to the Coulomb blockade of a single electron in the one-dimensional channel. A model that describes the operation of the new single electron transistor is suggested.