Single-electron Coulomb blockade in a nanometer field-effect transistor with a single barrier

Stephen Y. Chou, Yun Wang

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The first experimental study of a new nanometer field-effect transistor with a single barrier in its one-dimensional channel is presented. At low temperatures and as charge density in the channel was varied, nine reproducible periodic oscillations of conductance, in addition to 2e2/h conductance plateaus, were observed before the onset of the first 2e 2/h conductance plateau. It was found experimentally that each conductance oscillation corresponds to the Coulomb blockade of a single electron in the one-dimensional channel. A model that describes the operation of the new single electron transistor is suggested.

Original languageEnglish (US)
Pages (from-to)1591-1593
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number13
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Single-electron Coulomb blockade in a nanometer field-effect transistor with a single barrier'. Together they form a unique fingerprint.

  • Cite this