Abstract
The first experimental study of a new nanometer field-effect transistor with a single barrier in its one-dimensional channel is presented. At low temperatures and as charge density in the channel was varied, nine reproducible periodic oscillations of conductance, in addition to 2e2/h conductance plateaus, were observed before the onset of the first 2e 2/h conductance plateau. It was found experimentally that each conductance oscillation corresponds to the Coulomb blockade of a single electron in the one-dimensional channel. A model that describes the operation of the new single electron transistor is suggested.
Original language | English (US) |
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Pages (from-to) | 1591-1593 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 13 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)