Single-electron capacitance spectroscopy of discrete quantum levels

R. C. Ashoori, H. L. Stormer, J. S. Weiner, L. N. Pfeiffer, S. J. Pearton, K. W. Baldwin, K. W. West

Research output: Contribution to journalArticlepeer-review

443 Scopus citations


We observe the capacitance signal resulting from single electrons tunneling into discrete quantum levels. The electrons tunnel between a metallic layer and confined states of a single disk in a microscopic capacitor fabricated in GaAs. Charge transfer occurs only for bias voltages at which a quantum level resonates with the Fermi energy of the metallic layer. This creates a sequence of distinct capacitance peaks whose bias positions directly reflect the electronic spectrum of the confined structure. From the magnetic field evolution of the spectrum, we deduce the nature of the bound states.

Original languageEnglish (US)
Pages (from-to)3088-3091
Number of pages4
JournalPhysical review letters
Issue number20
StatePublished - 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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