Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization

Jian Gu, Stephen Y. Chou, Nan Yao, Henny Zandbergen, Jeffrey K. Farrer

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Single-crystal silicon has been achieved by patterning amorphous silicon film on silicon dioxide substrate into nanoscale lines and nickel-induced lateral crystallization. Line width affects the single-crystal silicon formation significantly. Narrow line widths, 30 nm or less, resulted in little lateral crystallization; while for line widths above 250 nm, multiple grains started to form. In-situ transmission electron microscope observation has been used to study the crystallization process. Lithography-constrained single seeding is proposed to explain the single-crystal formation.

Original languageEnglish (US)
Pages (from-to)1104-1106
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number6
DOIs
StatePublished - Aug 5 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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