Single-crystal growth and thermoelectric properties of Ge(Bi,Sb) 4Te7

Fabian Von Rohr, Andreas Schilling, Robert J. Cava

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4 Scopus citations

Abstract

The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb 4Te7 and Ge(Bi1-xSbx) 4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by Sb in GeBi4Te7. The thermopower in the Ge(Bi1-xSbx)4Te7 solid solution ranges from -117 to +160 μV K-1. The crossover from n-type to p-type is continuous with increasing Sb content and is observed at x ≈0.15. The highest thermoelectric efficiencies among the tested n-type and p-type samples are ZnT = 0.11 and ZpT = 0.20, respectively. For an optimal n-p couple in this alloy system the composite figure of merit is ZnpT = 0.17 at room temperature.

Original languageEnglish (US)
Article number075804
JournalJournal of Physics Condensed Matter
Volume25
Issue number7
DOIs
StatePublished - Feb 20 2013

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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