Simple-layered high mobility field effect heterostructured two-dimensional electron device

The authors present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8× 106 cm2 V s at the highest densities of 2.4× 1011 cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical high electron mobility transistors.