Experiments involving the epitaxial growth of GexSi 1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625°C.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1990|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)