Silicon vapor phase epitaxial growth catalysis by the presence of germane

P. M. Garone, J. C. Sturm, P. V. Schwartz, S. A. Schwarz, B. J. Wilkens

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Abstract

Experiments involving the epitaxial growth of GexSi 1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625°C.

Original languageEnglish (US)
Pages (from-to)1275-1277
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number13
DOIs
StatePublished - Dec 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Garone, P. M., Sturm, J. C., Schwartz, P. V., Schwarz, S. A., & Wilkens, B. J. (1990). Silicon vapor phase epitaxial growth catalysis by the presence of germane. Applied Physics Letters, 56(13), 1275-1277. https://doi.org/10.1063/1.102535