Silicon vapor phase epitaxial growth catalysis by the presence of germane

P. M. Garone; J. C. Sturm; P. V. Schwartz; S. A. Schwarz; B. J. Wilkens

doi:10.1063/1.102535

Silicon vapor phase epitaxial growth catalysis by the presence of germane

P. M. Garone, J. C. Sturm, P. V. Schwartz, S. A. Schwarz, B. J. Wilkens

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Abstract

Experiments involving the epitaxial growth of Ge_xSi _1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625°C.

Original language	English (US)
Pages (from-to)	1275-1277
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	13
DOIs	https://doi.org/10.1063/1.102535
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.102535

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title = "Silicon vapor phase epitaxial growth catalysis by the presence of germane",

abstract = "Experiments involving the epitaxial growth of GexSi 1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625°C.",

author = "Garone, {P. M.} and Sturm, {J. C.} and Schwartz, {P. V.} and Schwarz, {S. A.} and Wilkens, {B. J.}",

year = "1990",

doi = "10.1063/1.102535",

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volume = "56",

pages = "1275--1277",

journal = "Applied Physics Letters",

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T1 - Silicon vapor phase epitaxial growth catalysis by the presence of germane

AU - Garone, P. M.

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Schwarz, S. A.

AU - Wilkens, B. J.

PY - 1990

Y1 - 1990

N2 - Experiments involving the epitaxial growth of GexSi 1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625°C.

AB - Experiments involving the epitaxial growth of GexSi 1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625°C.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Silicon vapor phase epitaxial growth catalysis by the presence of germane

Abstract

All Science Journal Classification (ASJC) codes

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