Silicon temperature measurement by infrared transmission for rapid thermal processing applications

J. C. Sturm, P. V. Schwartz, P. M. Garone

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

The use of optical transmission at 1.3 and 1.55 μm is reported to measure the temperature of silicon wafers in a rapid thermal processing environment. Physically, as the wafer temperature increases, infrared transmission drops due to band-gap reduction and an increased phonon population. This method has been used to measure wafer temperature with a resolution of several degrees from 400 to 800°C, and is compatible with the thick quartz walls of the processing chamber. As part of this work, the absorption constant of silicon at 1.3 and 1.55 μm from 400 to 800°C has also been measured.

Original languageEnglish (US)
Pages (from-to)961-963
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number10
DOIs
StatePublished - Dec 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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