Silicon temperature measurement by infrared transmission for rapid thermal processing applications

J. C. Sturm; P. V. Schwartz; P. M. Garone

doi:10.1063/1.102592

Silicon temperature measurement by infrared transmission for rapid thermal processing applications

J. C. Sturm, P. V. Schwartz, P. M. Garone

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32 Scopus citations

Abstract

The use of optical transmission at 1.3 and 1.55 μm is reported to measure the temperature of silicon wafers in a rapid thermal processing environment. Physically, as the wafer temperature increases, infrared transmission drops due to band-gap reduction and an increased phonon population. This method has been used to measure wafer temperature with a resolution of several degrees from 400 to 800°C, and is compatible with the thick quartz walls of the processing chamber. As part of this work, the absorption constant of silicon at 1.3 and 1.55 μm from 400 to 800°C has also been measured.

Original language	English (US)
Pages (from-to)	961-963
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	10
DOIs	https://doi.org/10.1063/1.102592
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.102592

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title = "Silicon temperature measurement by infrared transmission for rapid thermal processing applications",

abstract = "The use of optical transmission at 1.3 and 1.55 μm is reported to measure the temperature of silicon wafers in a rapid thermal processing environment. Physically, as the wafer temperature increases, infrared transmission drops due to band-gap reduction and an increased phonon population. This method has been used to measure wafer temperature with a resolution of several degrees from 400 to 800°C, and is compatible with the thick quartz walls of the processing chamber. As part of this work, the absorption constant of silicon at 1.3 and 1.55 μm from 400 to 800°C has also been measured.",

author = "Sturm, {J. C.} and Schwartz, {P. V.} and Garone, {P. M.}",

year = "1990",

doi = "10.1063/1.102592",

language = "English (US)",

volume = "56",

pages = "961--963",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Silicon temperature measurement by infrared transmission for rapid thermal processing applications

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Garone, P. M.

PY - 1990

Y1 - 1990

N2 - The use of optical transmission at 1.3 and 1.55 μm is reported to measure the temperature of silicon wafers in a rapid thermal processing environment. Physically, as the wafer temperature increases, infrared transmission drops due to band-gap reduction and an increased phonon population. This method has been used to measure wafer temperature with a resolution of several degrees from 400 to 800°C, and is compatible with the thick quartz walls of the processing chamber. As part of this work, the absorption constant of silicon at 1.3 and 1.55 μm from 400 to 800°C has also been measured.

AB - The use of optical transmission at 1.3 and 1.55 μm is reported to measure the temperature of silicon wafers in a rapid thermal processing environment. Physically, as the wafer temperature increases, infrared transmission drops due to band-gap reduction and an increased phonon population. This method has been used to measure wafer temperature with a resolution of several degrees from 400 to 800°C, and is compatible with the thick quartz walls of the processing chamber. As part of this work, the absorption constant of silicon at 1.3 and 1.55 μm from 400 to 800°C has also been measured.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Silicon temperature measurement by infrared transmission for rapid thermal processing applications

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