Silicon temperature measurement by infrared absorption: Fundamental processes and doping effects

James C. Sturm; Casper M. Reaves

doi:10.1109/16.108215

Silicon temperature measurement by infrared absorption: Fundamental processes and doping effects

James C. Sturm, Casper M. Reaves

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Abstract

The temperature of silicon wafers may be inferred by measuring the transmission of infrared light through the wafers. In this paper, the fundamental absorption mechanisms in silicon at 1.30 and 1.55 μm have been investigated in the temperature range of 500-800°C. For lightly doped wafers in this temperature range, the absorption at 1.55 pm is by free carriers, and that at 1.30 μm is predominantly by bandgap absorption. The effect of heavy substrate doping on infrared absorption at elevated temperature has also been studied, and it was found that doping has little effect below levels of 7 × 10¹⁷ cm^-3, Above that level the temperature dependence of free carrier absorption strongly affects the transmission as a function of temperature. The knowledge of the fundamental absorption processes is then used to predict the ultimate temperature ranges over which the technique will be useful.

Original language	English (US)
Pages (from-to)	81-88
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	1
DOIs	https://doi.org/10.1109/16.108215
State	Published - Jan 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Silicon temperature measurement by infrared absorption: Fundamental processes and doping effects",

abstract = "The temperature of silicon wafers may be inferred by measuring the transmission of infrared light through the wafers. In this paper, the fundamental absorption mechanisms in silicon at 1.30 and 1.55 μm have been investigated in the temperature range of 500-800°C. For lightly doped wafers in this temperature range, the absorption at 1.55 pm is by free carriers, and that at 1.30 μm is predominantly by bandgap absorption. The effect of heavy substrate doping on infrared absorption at elevated temperature has also been studied, and it was found that doping has little effect below levels of 7 × 1017 cm-3, Above that level the temperature dependence of free carrier absorption strongly affects the transmission as a function of temperature. The knowledge of the fundamental absorption processes is then used to predict the ultimate temperature ranges over which the technique will be useful.",

author = "Sturm, {James C.} and Reaves, {Casper M.}",

note = "Funding Information: Manuscript received February 28, 1991; revised August 2, 1991. This work was supported by ONR, under Contract N00014-90-5-1316, NSF, Texas Instruments, the New Jersey Commission on Science and Technology. IBM (furnace donations), and SRC. J. C. Sturm is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. C. M. Reaves was with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. He is now with the University of Califonia at Santa Barbara, Santa Barbara, CA 93106. IEEE Log Number 9104306.",

year = "1992",

month = jan,

doi = "10.1109/16.108215",

language = "English (US)",

volume = "39",

pages = "81--88",

journal = "IEEE Transactions on Electron Devices",

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T2 - Fundamental processes and doping effects

AU - Sturm, James C.

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N1 - Funding Information: Manuscript received February 28, 1991; revised August 2, 1991. This work was supported by ONR, under Contract N00014-90-5-1316, NSF, Texas Instruments, the New Jersey Commission on Science and Technology. IBM (furnace donations), and SRC. J. C. Sturm is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. C. M. Reaves was with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. He is now with the University of Califonia at Santa Barbara, Santa Barbara, CA 93106. IEEE Log Number 9104306.

PY - 1992/1

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N2 - The temperature of silicon wafers may be inferred by measuring the transmission of infrared light through the wafers. In this paper, the fundamental absorption mechanisms in silicon at 1.30 and 1.55 μm have been investigated in the temperature range of 500-800°C. For lightly doped wafers in this temperature range, the absorption at 1.55 pm is by free carriers, and that at 1.30 μm is predominantly by bandgap absorption. The effect of heavy substrate doping on infrared absorption at elevated temperature has also been studied, and it was found that doping has little effect below levels of 7 × 1017 cm-3, Above that level the temperature dependence of free carrier absorption strongly affects the transmission as a function of temperature. The knowledge of the fundamental absorption processes is then used to predict the ultimate temperature ranges over which the technique will be useful.

AB - The temperature of silicon wafers may be inferred by measuring the transmission of infrared light through the wafers. In this paper, the fundamental absorption mechanisms in silicon at 1.30 and 1.55 μm have been investigated in the temperature range of 500-800°C. For lightly doped wafers in this temperature range, the absorption at 1.55 pm is by free carriers, and that at 1.30 μm is predominantly by bandgap absorption. The effect of heavy substrate doping on infrared absorption at elevated temperature has also been studied, and it was found that doping has little effect below levels of 7 × 1017 cm-3, Above that level the temperature dependence of free carrier absorption strongly affects the transmission as a function of temperature. The knowledge of the fundamental absorption processes is then used to predict the ultimate temperature ranges over which the technique will be useful.

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Silicon temperature measurement by infrared absorption: Fundamental processes and doping effects

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