Silicon surface passivation by an organic overlayer of 9,10- phenanthrenequinone

Sushobhan Avasthi, Yabing Qi, Grigory K. Vertelov, Jeffrey Schwartz, Antoine Kahn, James C. Sturm

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41 Scopus citations


Merged organic-silicon heterojunction devices require the passivation of dangling bonds at the silicon surface, preferably with a low-temperature process. In this paper, we demonstrate the high-quality passivation of the silicon (100) surface using an organic molecule (9,10-phenanthrenequinone, PQ). PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors and silicon. We measure low recombination velocities (∼150 cm/s) at the PQ-silicon interface. Metal/organic-insulator/silicon capacitors and transistors prove that at PQ-silicon interface, the Fermi level can be modulated. The formation of an inversion layer with electron mobility of 600 cm2 /Vs further demonstrates the passivation quality of PQ.

Original languageEnglish (US)
Article number222109
JournalApplied Physics Letters
Issue number22
StatePublished - May 31 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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