Silicon single hole quantum dot transistors for complementary digital circuits

Effendi Leobandung; Lingjie Guo; Stephen Y. Chou

Silicon single hole quantum dot transistors for complementary digital circuits

Effendi Leobandung, Lingjie Guo, Stephen Y. Chou

Research output: Contribution to journal › Conference article › peer-review

Abstract

Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed.

Original language	English (US)
Pages (from-to)	367-370
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Silicon single hole quantum dot transistors for complementary digital circuits",

abstract = "Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed.",

author = "Effendi Leobandung and Lingjie Guo and Chou, {Stephen Y.}",

year = "1995",

language = "English (US)",

pages = "367--370",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

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TY - JOUR

T1 - Silicon single hole quantum dot transistors for complementary digital circuits

AU - Leobandung, Effendi

AU - Guo, Lingjie

AU - Chou, Stephen Y.

PY - 1995

Y1 - 1995

N2 - Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed.

AB - Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed.

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M3 - Conference article

AN - SCOPUS:0029517848

SN - 0163-1918

SP - 367

EP - 370

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

ER -

Silicon single hole quantum dot transistors for complementary digital circuits

Abstract

All Science Journal Classification (ASJC) codes

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