Silicon single hole quantum dot transistors for complementary digital circuits

Effendi Leobandung, Lingjie Guo, Stephen Y. Chou

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed.

Original languageEnglish (US)
Pages (from-to)367-370
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1995
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: Dec 10 1995Dec 13 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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