Silicon single-electron quantum-dot transistor switch operating at room temperature

Lei Zhuang, Lingjie Guo, Stephen Y. Chou

Research output: Contribution to journalArticle

305 Scopus citations

Abstract

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.

Original languageEnglish (US)
Pages (from-to)1205-1207
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number10
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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