We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)