Silicon single-electron quantum-dot transistor switch operating at room temperature

Lei Zhuang; Lingjie Guo; Stephen Y. Chou

doi:10.1063/1.121014

Silicon single-electron quantum-dot transistor switch operating at room temperature

Lei Zhuang, Lingjie Guo, Stephen Y. Chou

Research output: Contribution to journal › Article › peer-review

332 Scopus citations

Abstract

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.

Original language	English (US)
Pages (from-to)	1205-1207
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	10
DOIs	https://doi.org/10.1063/1.121014
State	Published - 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.121014

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title = "Silicon single-electron quantum-dot transistor switch operating at room temperature",

abstract = "We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.",

author = "Lei Zhuang and Lingjie Guo and Chou, {Stephen Y.}",

year = "1998",

doi = "10.1063/1.121014",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Silicon single-electron quantum-dot transistor switch operating at room temperature

AU - Zhuang, Lei

AU - Guo, Lingjie

AU - Chou, Stephen Y.

PY - 1998

Y1 - 1998

N2 - We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.

AB - We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.

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U2 - 10.1063/1.121014

DO - 10.1063/1.121014

M3 - Article

AN - SCOPUS:22244482198

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VL - 72

SP - 1205

EP - 1207

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Silicon single-electron quantum-dot transistor switch operating at room temperature

Abstract

All Science Journal Classification (ASJC) codes

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