Silicon quantum-dot transistors operating above 100 K

Effendi Leobandung, Lingjie Guo, Yun Wang, Stephen Y. Chou

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

This paper reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb Blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX silicon wafer with the top silicon layer of 70 m thick. By studying the QDTs of different sizes on the same substrate, the effects of quantum dot size and construction size were investigated. The simulation tools based on various models were also developed to improve current understanding of the device operation.

Original languageEnglish (US)
Pages48-49
Number of pages2
StatePublished - Dec 1 1995
Externally publishedYes
EventProceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA
Duration: Jun 19 1995Jun 21 1995

Other

OtherProceedings of the 1995 53rd Annual Device Research Conference Digest
CityCharlottesville, VA, USA
Period6/19/956/21/95

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Silicon quantum-dot transistors operating above 100 K'. Together they form a unique fingerprint.

  • Cite this

    Leobandung, E., Guo, L., Wang, Y., & Chou, S. Y. (1995). Silicon quantum-dot transistors operating above 100 K. 48-49. Paper presented at Proceedings of the 1995 53rd Annual Device Research Conference Digest, Charlottesville, VA, USA, .