Silicon quantum-dot transistors operating above 100 K

Effendi Leobandung; Lingjie Guo; Yun Wang; Stephen Y. Chou

Silicon quantum-dot transistors operating above 100 K

Effendi Leobandung, Lingjie Guo, Yun Wang, Stephen Y. Chou

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb Blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX silicon wafer with the top silicon layer of 70 m thick. By studying the QDTs of different sizes on the same substrate, the effects of quantum dot size and construction size were investigated. The simulation tools based on various models were also developed to improve current understanding of the device operation.

Original language	English (US)
Pages	48-49
Number of pages	2
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: Jun 19 1995 → Jun 21 1995

Other

Other	Proceedings of the 1995 53rd Annual Device Research Conference Digest
City	Charlottesville, VA, USA
Period	6/19/95 → 6/21/95

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Silicon quantum-dot transistors operating above 100 K",

abstract = "This paper reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb Blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX silicon wafer with the top silicon layer of 70 m thick. By studying the QDTs of different sizes on the same substrate, the effects of quantum dot size and construction size were investigated. The simulation tools based on various models were also developed to improve current understanding of the device operation.",

author = "Effendi Leobandung and Lingjie Guo and Yun Wang and Chou, {Stephen Y.}",

year = "1995",

language = "English (US)",

pages = "48--49",

note = "Proceedings of the 1995 53rd Annual Device Research Conference Digest ; Conference date: 19-06-1995 Through 21-06-1995",

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TY - CONF

T1 - Silicon quantum-dot transistors operating above 100 K

AU - Leobandung, Effendi

AU - Guo, Lingjie

AU - Wang, Yun

AU - Chou, Stephen Y.

PY - 1995

Y1 - 1995

N2 - This paper reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb Blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX silicon wafer with the top silicon layer of 70 m thick. By studying the QDTs of different sizes on the same substrate, the effects of quantum dot size and construction size were investigated. The simulation tools based on various models were also developed to improve current understanding of the device operation.

AB - This paper reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb Blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX silicon wafer with the top silicon layer of 70 m thick. By studying the QDTs of different sizes on the same substrate, the effects of quantum dot size and construction size were investigated. The simulation tools based on various models were also developed to improve current understanding of the device operation.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029533863&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029533863

SP - 48

EP - 49

T2 - Proceedings of the 1995 53rd Annual Device Research Conference Digest

Y2 - 19 June 1995 through 21 June 1995

ER -

Silicon quantum-dot transistors operating above 100 K

Abstract

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All Science Journal Classification (ASJC) codes

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