Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

Robert W. Ade; Edward E. Harstead; A. H. Amirfazli; Theodore Cacouris; Eric R. Fossum; Paul R. Prucnal; Richard M. Osgood

doi:10.1109/T-ED.1987.23082

Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

Robert W. Ade
, Edward E. Harstead
, A. H. Amirfazli
, Theodore Cacouris
, Eric R. Fossum
, Paul R. Prucnal
, Richard M. Osgood

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.

Original language	English (US)
Pages (from-to)	1283-1289
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1987.23082
State	Published - Jun 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1987.23082

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@article{8964b4183a0143ba9c94fd222943e14d,

title = "Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits",

abstract = "A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.",

author = "Ade, \{Robert W.\} and Harstead, \{Edward E.\} and Amirfazli, \{A. H.\} and Theodore Cacouris and Fossum, \{Eric R.\} and Prucnal, \{Paul R.\} and Osgood, \{Richard M.\}",

year = "1987",

month = jun,

doi = "10.1109/T-ED.1987.23082",

language = "English (US)",

volume = "34",

pages = "1283--1289",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

AU - Ade, Robert W.

AU - Harstead, Edward E.

AU - Amirfazli, A. H.

AU - Cacouris, Theodore

AU - Fossum, Eric R.

AU - Prucnal, Paul R.

AU - Osgood, Richard M.

PY - 1987/6

Y1 - 1987/6

N2 - A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.

AB - A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.

UR - https://www.scopus.com/pages/publications/0023366018

UR - https://www.scopus.com/pages/publications/0023366018#tab=citedBy

U2 - 10.1109/T-ED.1987.23082

DO - 10.1109/T-ED.1987.23082

M3 - Article

AN - SCOPUS:0023366018

SN - 0018-9383

VL - 34

SP - 1283

EP - 1289

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

Abstract

All Science Journal Classification (ASJC) codes

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