Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

Robert W. Ade; Edward E. Harstead; A. H. Amirfazli; Theodore Cacouris; Eric R. Fossum; Paul R. Prucnal; Richard M. Osgood

doi:10.1109/T-ED.1987.23082

Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

Robert W. Ade, Edward E. Harstead, A. H. Amirfazli, Theodore Cacouris, Eric R. Fossum, Paul R. Prucnal, Richard M. Osgood

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.

Original language	English (US)
Pages (from-to)	1283-1289
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1987.23082
State	Published - Jun 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1987.23082

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title = "Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits",

abstract = "A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.",

author = "Ade, {Robert W.} and Harstead, {Edward E.} and Amirfazli, {A. H.} and Theodore Cacouris and Fossum, {Eric R.} and Prucnal, {Paul R.} and Osgood, {Richard M.}",

year = "1987",

month = jun,

doi = "10.1109/T-ED.1987.23082",

language = "English (US)",

volume = "34",

pages = "1283--1289",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

AU - Ade, Robert W.

AU - Harstead, Edward E.

AU - Amirfazli, A. H.

AU - Cacouris, Theodore

AU - Fossum, Eric R.

AU - Prucnal, Paul R.

AU - Osgood, Richard M.

PY - 1987/6

Y1 - 1987/6

N2 - A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.

AB - A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.

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UR - http://www.scopus.com/inward/citedby.url?scp=0023366018&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1987.23082

DO - 10.1109/T-ED.1987.23082

M3 - Article

AN - SCOPUS:0023366018

SN - 0018-9383

VL - 34

SP - 1283

EP - 1289

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Silicon Photodetector Structure for Direct Coupling of Optical Fibers to Integrated Circuits

Abstract

All Science Journal Classification (ASJC) codes

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