Abstract
A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.
Original language | English (US) |
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Pages (from-to) | 1283-1289 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 34 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1987 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering