A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiberoptic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 μm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 nA.
|Original language||English (US)|
|Number of pages||7|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Jun 1987|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering