Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors

Simon Pfaehler, Anshuma Pathak, Kung Ching Liao, Jeffrey Schwartz, Marc Tornow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The fabrication and characterization of planar silicon nanogap electrode structures is described in which contact separation ≥ 30 nm was achieved. Starting from highly doped silicon-on-insulator substrates, fabrication is based on precise control of electron-beam lithography and subsequent reactive ion etching (etch rate 3.6 nm/s). A monolayer of an aromatic organophosphonate is then assembled in the etched nanogap. Conductance is greatly improved compared to a device absent the monolayer, and distinct field-effect induced modulation of the conductance is observed. Finite element simulations of the electrostatic potential distribution of the device structure supports its suitability as a three-terminal field effect device.

Original languageEnglish (US)
Title of host publication19th IEEE International Conference on Nanotechnology, NANO 2019
PublisherIEEE Computer Society
Pages521-525
Number of pages5
ISBN (Electronic)9781728128917
DOIs
StatePublished - Jul 2019
Event19th IEEE International Conference on Nanotechnology, NANO 2019 - Macau, China
Duration: Jul 22 2019Jul 26 2019

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2019-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference19th IEEE International Conference on Nanotechnology, NANO 2019
CountryChina
CityMacau
Period7/22/197/26/19

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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