Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors

Simon Pfaehler; Anshuma Pathak; Kung Ching Liao; Jeffrey Schwartz; Marc Tornow

doi:10.1109/NANO46743.2019.8993870

Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors

Simon Pfaehler, Anshuma Pathak, Kung Ching Liao, Jeffrey Schwartz, Marc Tornow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The fabrication and characterization of planar silicon nanogap electrode structures is described in which contact separation ≥ 30 nm was achieved. Starting from highly doped silicon-on-insulator substrates, fabrication is based on precise control of electron-beam lithography and subsequent reactive ion etching (etch rate 3.6 nm/s). A monolayer of an aromatic organophosphonate is then assembled in the etched nanogap. Conductance is greatly improved compared to a device absent the monolayer, and distinct field-effect induced modulation of the conductance is observed. Finite element simulations of the electrostatic potential distribution of the device structure supports its suitability as a three-terminal field effect device.

Original language	English (US)
Title of host publication	19th IEEE International Conference on Nanotechnology, NANO 2019
Publisher	IEEE Computer Society
Pages	521-525
Number of pages	5
ISBN (Electronic)	9781728128917
DOIs	https://doi.org/10.1109/NANO46743.2019.8993870
State	Published - Jul 2019
Event	19th IEEE International Conference on Nanotechnology, NANO 2019 - Macau, China Duration: Jul 22 2019 → Jul 26 2019

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2019-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	19th IEEE International Conference on Nanotechnology, NANO 2019
Country/Territory	China
City	Macau
Period	7/22/19 → 7/26/19

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO46743.2019.8993870

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Pfaehler, S., Pathak, A., Liao, K. C., Schwartz, J., & Tornow, M. (2019). Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors. In 19th IEEE International Conference on Nanotechnology, NANO 2019 (pp. 521-525). Article 8993870 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2019-July). IEEE Computer Society. https://doi.org/10.1109/NANO46743.2019.8993870

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title = "Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors",

abstract = "The fabrication and characterization of planar silicon nanogap electrode structures is described in which contact separation ≥ 30 nm was achieved. Starting from highly doped silicon-on-insulator substrates, fabrication is based on precise control of electron-beam lithography and subsequent reactive ion etching (etch rate 3.6 nm/s). A monolayer of an aromatic organophosphonate is then assembled in the etched nanogap. Conductance is greatly improved compared to a device absent the monolayer, and distinct field-effect induced modulation of the conductance is observed. Finite element simulations of the electrostatic potential distribution of the device structure supports its suitability as a three-terminal field effect device.",

author = "Simon Pfaehler and Anshuma Pathak and Liao, {Kung Ching} and Jeffrey Schwartz and Marc Tornow",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 19th IEEE International Conference on Nanotechnology, NANO 2019 ; Conference date: 22-07-2019 Through 26-07-2019",

year = "2019",

month = jul,

doi = "10.1109/NANO46743.2019.8993870",

language = "English (US)",

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Pfaehler, S, Pathak, A, Liao, KC, Schwartz, J & Tornow, M 2019, Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors. in 19th IEEE International Conference on Nanotechnology, NANO 2019., 8993870, Proceedings of the IEEE Conference on Nanotechnology, vol. 2019-July, IEEE Computer Society, pp. 521-525, 19th IEEE International Conference on Nanotechnology, NANO 2019, Macau, China, 7/22/19. https://doi.org/10.1109/NANO46743.2019.8993870

Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors. / Pfaehler, Simon; Pathak, Anshuma; Liao, Kung Ching et al.
19th IEEE International Conference on Nanotechnology, NANO 2019. IEEE Computer Society, 2019. p. 521-525 8993870 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2019-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors

AU - Pfaehler, Simon

AU - Pathak, Anshuma

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AU - Schwartz, Jeffrey

AU - Tornow, Marc

PY - 2019/7

Y1 - 2019/7

N2 - The fabrication and characterization of planar silicon nanogap electrode structures is described in which contact separation ≥ 30 nm was achieved. Starting from highly doped silicon-on-insulator substrates, fabrication is based on precise control of electron-beam lithography and subsequent reactive ion etching (etch rate 3.6 nm/s). A monolayer of an aromatic organophosphonate is then assembled in the etched nanogap. Conductance is greatly improved compared to a device absent the monolayer, and distinct field-effect induced modulation of the conductance is observed. Finite element simulations of the electrostatic potential distribution of the device structure supports its suitability as a three-terminal field effect device.

AB - The fabrication and characterization of planar silicon nanogap electrode structures is described in which contact separation ≥ 30 nm was achieved. Starting from highly doped silicon-on-insulator substrates, fabrication is based on precise control of electron-beam lithography and subsequent reactive ion etching (etch rate 3.6 nm/s). A monolayer of an aromatic organophosphonate is then assembled in the etched nanogap. Conductance is greatly improved compared to a device absent the monolayer, and distinct field-effect induced modulation of the conductance is observed. Finite element simulations of the electrostatic potential distribution of the device structure supports its suitability as a three-terminal field effect device.

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M3 - Conference contribution

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T3 - Proceedings of the IEEE Conference on Nanotechnology

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EP - 525

BT - 19th IEEE International Conference on Nanotechnology, NANO 2019

PB - IEEE Computer Society

T2 - 19th IEEE International Conference on Nanotechnology, NANO 2019

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ER -

Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors

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