Silicon interstitial driven loss of substitutional carbon from SiGeC structures

M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, D. J. Tweet

Research output: Contribution to journalArticle

Abstract

The effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

Original languageEnglish (US)
Pages (from-to)J671-J676
JournalMaterials Research Society Symposium - Proceedings
Volume669
StatePublished - Jan 1 2001

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Carroll, M. S., Sturm, J. C., Napolitani, E., De Salvador, D., Berti, M., Stangl, J., Bauer, G., & Tweet, D. J. (2001). Silicon interstitial driven loss of substitutional carbon from SiGeC structures. Materials Research Society Symposium - Proceedings, 669, J671-J676.