Silicon interstitial driven loss of substitutional carbon from SiGeC structures

M. S. Carroll; J. C. Sturm; E. Napolitani; D. De Salvador; M. Berti; J. Stangl; G. Bauer; D. J. Tweet

doi:10.1557/proc-669-j6.7

Silicon interstitial driven loss of substitutional carbon from SiGeC structures

M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, D. J. Tweet

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of annealing silicon capped pseudomorphic Si_0.7865Ge_0.21C_0.0035 or Si_0.998C_0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

Original language	English (US)
Pages (from-to)	J671-J676
Journal	Materials Research Society Symposium - Proceedings
Volume	669
DOIs	https://doi.org/10.1557/proc-669-j6.7
State	Published - 2001

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-669-j6.7

Cite this

@article{f18aef22195c41fc92b49882ece15a46,

title = "Silicon interstitial driven loss of substitutional carbon from SiGeC structures",

abstract = "The effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.",

author = "Carroll, {M. S.} and Sturm, {J. C.} and E. Napolitani and {De Salvador}, D. and M. Berti and J. Stangl and G. Bauer and Tweet, {D. J.}",

year = "2001",

doi = "10.1557/proc-669-j6.7",

language = "English (US)",

volume = "669",

pages = "J671--J676",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Silicon interstitial driven loss of substitutional carbon from SiGeC structures

AU - Carroll, M. S.

AU - Sturm, J. C.

AU - Napolitani, E.

AU - De Salvador, D.

AU - Berti, M.

AU - Stangl, J.

AU - Bauer, G.

AU - Tweet, D. J.

PY - 2001

Y1 - 2001

N2 - The effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

AB - The effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

UR - http://www.scopus.com/inward/record.url?scp=0035557028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035557028&partnerID=8YFLogxK

U2 - 10.1557/proc-669-j6.7

DO - 10.1557/proc-669-j6.7

M3 - Article

AN - SCOPUS:0035557028

SN - 0272-9172

VL - 669

SP - J671-J676

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Silicon interstitial driven loss of substitutional carbon from SiGeC structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this