Silicon integrated 280 GHz imaging chipset with 4 × 4 SiGe receiver array and CMOS source

Kaushik Sengupta, Dongjin Seo, Lita Yang, Ali Hajimiri

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

In this paper, we report an integrated silicon-based active imaging chipset with a detector array in 0.13 μm SiGe process and a CMOS-based source array operating in the 240-290 GHz range. The chipset operates at room-temperature with no external RF or optical sources, high-resistivity silicon lenses (HRSi) or waveguides or any custom fabrication options, such as high-resistivity substrates or substrate thinning. The receiver chip consists of a 2-D array of 16 pixels, measuring 2.5 mm × 2.5 mm with integrated antennas. An electromagnetic-active circuit co-design approach is carried out to ensure high-efficiency interface with detectors operating above cut-off frequencies with good impedance matching, near-optimal noise performance, while simultaneously suppressing the dominant surface-wave modes in a lensless lossy bulk silicon substrate. The array performance is characterized in the WR-3 band between 220-320 GHz. At the designed frequency of 260 GHz, the NEP of all pixels stays between 7.9 pW √ Hz -8.8 pW √ Hz. The imaging chipset consists of this 2D detector array chip and a CMOS-based source array chip measuring 0.8 mm ×0.8 mm. The entire system dissipates less than 180 mW of DC power, representing a truly integrated solution.

Original languageEnglish (US)
Article number7084201
Pages (from-to)427-437
Number of pages11
JournalIEEE Transactions on Terahertz Science and Technology
Volume5
Issue number3
DOIs
StatePublished - May 1 2015

All Science Journal Classification (ASJC) codes

  • Radiation
  • Electrical and Electronic Engineering

Keywords

  • Beam-forming
  • BiCMOS
  • imaging
  • near-field
  • on-chip antenna
  • radiation
  • substrate modes
  • terahertz (THz)

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