Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation

Xiang Zheng Bo; Leonid P. Rokhinson; J. C. Sturm

Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation

Xiang Zheng Bo, Leonid P. Rokhinson, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO₂, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si_0.8Ge_0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700°C using a hydrogen pre-cleaning process at 800°C and 10 torr. SIMS analysis and photoluminescence (PL) of strained SiGe capped with epitaxial regrown silicon show a clean interface. Nano-gaps between doped SiGe filled and overgrown with epitaxial silicon show an electrical insulating property at 4.2 K.

Original language	English (US)
Pages (from-to)	193-198
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	737
State	Published - 2003
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: Dec 2 2002 → Dec 5 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation",

abstract = "SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO2, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si0.8Ge0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700°C using a hydrogen pre-cleaning process at 800°C and 10 torr. SIMS analysis and photoluminescence (PL) of strained SiGe capped with epitaxial regrown silicon show a clean interface. Nano-gaps between doped SiGe filled and overgrown with epitaxial silicon show an electrical insulating property at 4.2 K.",

author = "Bo, {Xiang Zheng} and Rokhinson, {Leonid P.} and Sturm, {J. C.}",

year = "2003",

language = "English (US)",

volume = "737",

pages = "193--198",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

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TY - JOUR

T1 - Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation

AU - Bo, Xiang Zheng

AU - Rokhinson, Leonid P.

AU - Sturm, J. C.

PY - 2003

Y1 - 2003

N2 - SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO2, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si0.8Ge0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700°C using a hydrogen pre-cleaning process at 800°C and 10 torr. SIMS analysis and photoluminescence (PL) of strained SiGe capped with epitaxial regrown silicon show a clean interface. Nano-gaps between doped SiGe filled and overgrown with epitaxial silicon show an electrical insulating property at 4.2 K.

AB - SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO2, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si0.8Ge0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700°C using a hydrogen pre-cleaning process at 800°C and 10 torr. SIMS analysis and photoluminescence (PL) of strained SiGe capped with epitaxial regrown silicon show a clean interface. Nano-gaps between doped SiGe filled and overgrown with epitaxial silicon show an electrical insulating property at 4.2 K.

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M3 - Conference article

AN - SCOPUS:0038488185

SN - 0272-9172

VL - 737

SP - 193

EP - 198

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation

Abstract

All Science Journal Classification (ASJC) codes

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