Abstract
A presentation of the kinetic model which explains the silicon epitaxial growth in terms of the microscopic view is given. Recently various kinetics of elementary reactions on the silicon surface are clarified energetically by ab initio calculations. In order to incorporate such elementary reactions into the numerical model, dynamic Monte Carlo (DMC) is applied.
Original language | English (US) |
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Pages (from-to) | 6503-6511 |
Number of pages | 9 |
Journal | Journal of Chemical Physics |
Volume | 118 |
Issue number | 14 |
DOIs | |
State | Published - Apr 8 2003 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
- Physical and Theoretical Chemistry