Silicon epitaxial growth on the Si(001)2×1 surface from silane using dynamic Monte Carlo simulations

Koji Satake, David B. Graves

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A presentation of the kinetic model which explains the silicon epitaxial growth in terms of the microscopic view is given. Recently various kinetics of elementary reactions on the silicon surface are clarified energetically by ab initio calculations. In order to incorporate such elementary reactions into the numerical model, dynamic Monte Carlo (DMC) is applied.

Original languageEnglish (US)
Pages (from-to)6503-6511
Number of pages9
JournalJournal of Chemical Physics
Volume118
Issue number14
DOIs
StatePublished - Apr 8 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry

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