Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors

X. Xiao; James C. Sturm; S. R. Parihar; S. A. Lyon; D. Meyerhofer; Stephen Palfrey; F. V. Shallcross

doi:10.1109/55.215151

Silicide/Strained Si_1-xGe_x Schottky-Barrier Infrared Detectors

X. Xiao, James C. Sturm, S. R. Parihar, S. A. Lyon, D. Meyerhofer, Stephen Palfrey, F. V. Shallcross

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

By employing a thin silicon sacrificial cap layer for silicide formation we have successfully demonstrated Pd₂Si/strained Si₁-_xGe_x Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si ₁-_xGe_xalloy. The Schottky barrier height of the silicide/strained Si_1-xGe_x, detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8 μm in PtSi/Si_0.85Ge₀₁₅ detectors. We have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

Original language	English (US)
Pages (from-to)	199-201
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/55.215151
State	Published - Apr 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.215151

Cite this

@article{591bcdd7459a45e5920ab2beb4f98992,

title = "Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors",

abstract = "By employing a thin silicon sacrificial cap layer for silicide formation we have successfully demonstrated Pd2Si/strained Si1-xGex Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si 1-xGexalloy. The Schottky barrier height of the silicide/strained Si1-xGex, detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8 μm in PtSi/Si0.85Ge015 detectors. We have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.",

author = "X. Xiao and Sturm, \{James C.\} and Parihar, \{S. R.\} and Lyon, \{S. A.\} and D. Meyerhofer and Stephen Palfrey and Shallcross, \{F. V.\}",

note = "Funding Information: Manuscript received December 29, 1992; revised January 29, 1993. This work was supported by the New Jersey Commission on Science and Technology, the National Science Foundation, and the Office of Naval Research.",

year = "1993",

month = apr,

doi = "10.1109/55.215151",

language = "English (US)",

volume = "14",

pages = "199--201",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors

AU - Xiao, X.

AU - Sturm, James C.

AU - Parihar, S. R.

AU - Lyon, S. A.

AU - Meyerhofer, D.

AU - Palfrey, Stephen

AU - Shallcross, F. V.

N1 - Funding Information: Manuscript received December 29, 1992; revised January 29, 1993. This work was supported by the New Jersey Commission on Science and Technology, the National Science Foundation, and the Office of Naval Research.

PY - 1993/4

Y1 - 1993/4

N2 - By employing a thin silicon sacrificial cap layer for silicide formation we have successfully demonstrated Pd2Si/strained Si1-xGex Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si 1-xGexalloy. The Schottky barrier height of the silicide/strained Si1-xGex, detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8 μm in PtSi/Si0.85Ge015 detectors. We have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

AB - By employing a thin silicon sacrificial cap layer for silicide formation we have successfully demonstrated Pd2Si/strained Si1-xGex Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si 1-xGexalloy. The Schottky barrier height of the silicide/strained Si1-xGex, detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8 μm in PtSi/Si0.85Ge015 detectors. We have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

UR - https://www.scopus.com/pages/publications/0027578768

UR - https://www.scopus.com/inward/citedby.url?scp=0027578768&partnerID=8YFLogxK

U2 - 10.1109/55.215151

DO - 10.1109/55.215151

M3 - Article

AN - SCOPUS:0027578768

SN - 0741-3106

VL - 14

SP - 199

EP - 201

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Silicide/Strained Si_1-xGe_x Schottky-Barrier Infrared Detectors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this