Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors

X. Xiao, James C. Sturm, S. R. Parihar, S. A. Lyon, D. Meyerhofer, Stephen Palfrey, F. V. Shallcross

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Abstract

By employing a thin silicon sacrificial cap layer for silicide formation we have successfully demonstrated Pd2Si/strained Si1-xGex Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si 1-xGexalloy. The Schottky barrier height of the silicide/strained Si1-xGex, detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8 μm in PtSi/Si0.85Ge015 detectors. We have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

Original languageEnglish (US)
Pages (from-to)199-201
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number4
DOIs
StatePublished - Apr 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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