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Silicide/Si
1-x
Ge
x
Schottky-barrier long-wavelength infrared detectors
X. Xiao
,
J. C. Sturm
, S. R. Parihar
,
S. A. Lyon
, D. Meyerhofer
, S. Palfrey
Electrical and Computer Engineering
Keller Center for Innovation in Engineering Education
Princeton Materials Institute
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
5
Scopus citations
Overview
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Dive into the research topics of 'Silicide/Si
1-x
Ge
x
Schottky-barrier long-wavelength infrared detectors'. Together they form a unique fingerprint.
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Keyphrases
Si1-xGex
100%
Schottky Barrier
100%
Silicide
100%
Long-wave Infrared Detector
100%
PtSi
75%
Cutoff Wavelength
50%
Fabrication Methods
25%
Low Leakage
25%
Integrable
25%
Schottky Barrier Height
25%
Si1-xGex Alloy
25%
Microarray Technology
25%
Segregation Effect
25%
Capping Layer
25%
Focal Plane Array
25%
Internal Photoemission
25%
Ge Fraction
25%
Silicide Formation
25%
Thin-film Silicon
25%
Pd2Si
25%
Fermi Level pinning
25%
High Quantum Efficiency
25%
Physics
Infrared Detector
100%
Photoelectric Emission
50%
Focal Plane Device
50%
Schottky Barrier Height
50%