@inproceedings{e2fe0639012c43aaadba734ab2b1f4a9,
title = "Silicide/Si1-xGex Schottky-barrier long-wavelength infrared detectors",
abstract = "In this paper, we demonstrate for the first time both Pd2Si/Si1-xGex and PtSi/Si1-xGex Schottky-barrier long-wavelength infrared detectors. By employing a thin silicon sacrificial cap layer for silicide formation, Ge segregation effects and consequent Fermi level pinning when metal directly reacts with Si1-xGex alloy are eliminated. The Schottky barrier height of the silicide/Si1-xGex detector measured by internal photoemission decreases with increasing Ge fraction, allowing tuning of its cutoff wavelength. The cut-off wavelength has been extended beyond 8 mu m in PtSi/Si0.85Ge0.15 detectors. It has been shown that high quantum efficiency and ideally low leakage can be obtained from these detectors. The fabrication processes are easily integrable with the current PtSi/Si focal-plane-array technology.",
author = "X. Xiao and Sturm, {J. C.} and Parihar, {S. R.} and Lyon, {S. A.} and D. Meyerhofer and S. Palfrey",
note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",
year = "1992",
doi = "10.1109/IEDM.1992.307324",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "125--128",
booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",
address = "United States",
}