Silicide/Si1-xGex Schottky-barrier long-wavelength infrared detectors

X. Xiao, J. C. Sturm, S. R. Parihar, S. A. Lyon, D. Meyerhofer, S. Palfrey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


In this paper, we demonstrate for the first time both Pd2Si/Si1-xGex and PtSi/Si1-xGex Schottky-barrier long-wavelength infrared detectors. By employing a thin silicon sacrificial cap layer for silicide formation, Ge segregation effects and consequent Fermi level pinning when metal directly reacts with Si1-xGex alloy are eliminated. The Schottky barrier height of the silicide/Si1-xGex detector measured by internal photoemission decreases with increasing Ge fraction, allowing tuning of its cutoff wavelength. The cut-off wavelength has been extended beyond 8 mu m in PtSi/Si0.85Ge0.15 detectors. It has been shown that high quantum efficiency and ideally low leakage can be obtained from these detectors. The fabrication processes are easily integrable with the current PtSi/Si focal-plane-array technology.

Original languageEnglish (US)
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780308174
StatePublished - 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: Dec 13 1992Dec 16 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/TerritoryUnited States
CitySan Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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