Silicide/SiGe Schottky diode infrared detectors

Jorge R. Jimenez, Xiaodong Xiao, James C. Sturm, Paul W. Pellegrini, Melanie M. Weeks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


PtSi/Si/SiGe/Si Schottky diode IR detectors with extended and tunable cut-off wavelengths have been fabricated. Cut-off wavelengths depend on the SiGe composition and extend up to 10 μm for Si80Ge20. The cut-off wavelengths are also tunable by reverse bias. The tunability is due to the SiGe/Si offset serving as an additional potential barrier behind the Schottky barrier that can be varied in energy by a reverse bias. The sensitivity and range of the tunability is controlled by the SiGe thickness and composition. Cut-off wavelengths tunable from 4 μm at zero volts to 10 μm at 3 volts have been obtained. Quantum efficiency values are normal for operation at the long- wavelength end, but reduced over the rest of tunable range, because of the greater distance from the PtSi to the SiGe/Si offset.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsEustace L. Dereniak, Robert E. Sampson
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Number of pages11
ISBN (Print)0819415294
StatePublished - 1994
Externally publishedYes
EventInfrared Detectors and Focal Plane Arrays III - Orlando, FL, USA
Duration: Apr 5 1994Apr 6 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherInfrared Detectors and Focal Plane Arrays III
CityOrlando, FL, USA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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