@inproceedings{e7e3f18842494ac6bb11ea6d76f35af2,
title = "Silicide/SiGe Schottky diode infrared detectors",
abstract = "PtSi/Si/SiGe/Si Schottky diode IR detectors with extended and tunable cut-off wavelengths have been fabricated. Cut-off wavelengths depend on the SiGe composition and extend up to 10 μm for Si80Ge20. The cut-off wavelengths are also tunable by reverse bias. The tunability is due to the SiGe/Si offset serving as an additional potential barrier behind the Schottky barrier that can be varied in energy by a reverse bias. The sensitivity and range of the tunability is controlled by the SiGe thickness and composition. Cut-off wavelengths tunable from 4 μm at zero volts to 10 μm at 3 volts have been obtained. Quantum efficiency values are normal for operation at the long- wavelength end, but reduced over the rest of tunable range, because of the greater distance from the PtSi to the SiGe/Si offset.",
author = "Jimenez, {Jorge R.} and Xiaodong Xiao and Sturm, {James C.} and Pellegrini, {Paul W.} and Weeks, {Melanie M.}",
year = "1994",
language = "English (US)",
isbn = "0819415294",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",
pages = "393--403",
editor = "Dereniak, {Eustace L.} and Sampson, {Robert E.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Infrared Detectors and Focal Plane Arrays III ; Conference date: 05-04-1994 Through 06-04-1994",
}