Silaindacenodithiophene semiconducting polymers for efficient solar cells and high-mobility ambipolar transistors

Raja Shahid Ashraf, Zhuoying Chen, Dong Seok Leem, Hugo Bronstein, Weimin Zhang, Bob Schroeder, Yves Geerts, Jeremy Smith, Scott Watkins, Thomas D. Anthopoulos, Henning Sirringhaus, John C. De Mello, Martin Heeney, Iain McCulloch

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125 Scopus citations


New silaindacenodithiophene (SiIDT) semiconducting polymers were reported. Two repeat units were selected for copolymerization. Polymers P-1 and P-2 were both synthesized by Stille cross coupling, using microwave heating conditions. Polymerizations proceeded in good yield when the stannyl groups were located on the electron rich SiIDT, with sufficiently high molecular weights obtained. Both polymers show evidence of crystallinity when evaluated by differential scanning calorimetry (DSC). By replacing the BT unit (P-1) with DPP (P-2), a redshifted absorption spectrum with more defined vibronic structure is obtained. The deep HOMO level ensures that the P-1 is stable against electrochemical oxidization, and thus good device life times can be expected. Both as-spun and annealed P-2 FET devices show clear ambipolar characteristics. These polymers can exhibit either high solar cell efficiencies of greater than 4% PCE, or high ambipolar charge transport, with holes and electrons exhibiting mobilities of greater than 0.1 cm2/(V s).

Original languageEnglish (US)
Pages (from-to)768-770
Number of pages3
JournalChemistry of Materials
Issue number3
StatePublished - Feb 8 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry


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