@inproceedings{b21e0f70e2b64a9986dfcd4f124a0c25,
title = "SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth",
abstract = "In this paper, we report a new method for the fabrication of Si-based quantum dot devices with an all low-energy patterning process based on AFM lithography (to avoid defects from e-beam and RIE) and Si/SiGe heterojunctions with epitaxial regrowth to confine holes in three-dimensions. A single-hole transistor, which is the first reported SiGe quantum device with heterojunction passivation/carrier confinement, shows remarkably clean Coulomb blockade oscillations.",
keywords = "Germanium silicon alloys, Heterojunctions, Oxidation, Physics, Quantum computing, Quantum dots, Silicon germanium, Single electron devices, Temperature, Voltage",
author = "Bo, {Xiang Zheng} and Rokhinson, {L. P.} and Tsui, {D. C.} and Sturm, {J. C.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 61st Device Research Conference, DRC 2003 ; Conference date: 23-06-2003 Through 25-06-2003",
year = "2003",
doi = "10.1109/DRC.2003.1226902",
language = "English (US)",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "129--130",
booktitle = "61st Device Research Conference, DRC 2003 - Conference Digest",
address = "United States",
}