SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth

Xiang Zheng Bo, L. P. Rokhinson, D. C. Tsui, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we report a new method for the fabrication of Si-based quantum dot devices with an all low-energy patterning process based on AFM lithography (to avoid defects from e-beam and RIE) and Si/SiGe heterojunctions with epitaxial regrowth to confine holes in three-dimensions. A single-hole transistor, which is the first reported SiGe quantum device with heterojunction passivation/carrier confinement, shows remarkably clean Coulomb blockade oscillations.

Original languageEnglish (US)
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages129-130
Number of pages2
ISBN (Electronic)0780377273
DOIs
StatePublished - Jan 1 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: Jun 23 2003Jun 25 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2003-January
ISSN (Print)1548-3770

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period6/23/036/25/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Germanium silicon alloys
  • Heterojunctions
  • Oxidation
  • Physics
  • Quantum computing
  • Quantum dots
  • Silicon germanium
  • Single electron devices
  • Temperature
  • Voltage

Fingerprint Dive into the research topics of 'SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth'. Together they form a unique fingerprint.

Cite this