SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth

Xiang Zheng Bo, L. P. Rokhinson, N. Yao, D. C. Tsui, J. C. Sturm

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A SiGe quantum dot single-hole transistor passivated by silicon epitaxial regrowth with extremely stable Coulomb blockade oscillations has been demonstrated. The quantum dot was defined by atomic force microscopy nanopatterning technique and subsequently passivated by the epitaxial regrowth of silicon. Such passivation of the dot avoids any potential defect states on the dot associated with the SiSi O2 interface. Coulomb blockade oscillations controlled by side planar gating at ∼0.3 K are reproducible, in sharp contrast with the noisy and irreproducible I-V characteristics of unpassivated SiGe quantum dot devices. An additional top gate was used to further tune the Coulomb blockade oscillations, enabling a shift in side-gate voltage of up to three periods.

Original languageEnglish (US)
Article number094317
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
StatePublished - Nov 23 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth'. Together they form a unique fingerprint.

  • Cite this