Sideband elimination and high efficiencies in a strongly tapered free-electron laser amplifier

J. Chen; A. Bhattacharjee

doi:10.1016/0168-9002(95)01360-1

Sideband elimination and high efficiencies in a strongly tapered free-electron laser amplifier

J. Chen, A. Bhattacharjee

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

It is demonstrated by numerical simulation that strongly tapered free-electron laser amplifiers exhibit negligible sideband growth, consistent with the predictions of a recent analytical theory [R.P. Pilla and A. Bhattacharjee, Phys. Plasma 1 (1994) 390]. One-dimensional simulations are presented for a short-wavelength (∼10 μm) amplifier with a quadratically tapered wiggler. For pre-bunched electrons with a phase-spread in the range (1/3-1/2) mod 2π and thermal spread in the range (0.5-1)%, the extraction efficiency lies in the range (50-33)%.

Original language	English (US)
Pages (from-to)	363-366
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	375
Issue number	1-3
DOIs	https://doi.org/10.1016/0168-9002(95)01360-1
State	Published - Jun 11 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-9002(95)01360-1

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title = "Sideband elimination and high efficiencies in a strongly tapered free-electron laser amplifier",

abstract = "It is demonstrated by numerical simulation that strongly tapered free-electron laser amplifiers exhibit negligible sideband growth, consistent with the predictions of a recent analytical theory [R.P. Pilla and A. Bhattacharjee, Phys. Plasma 1 (1994) 390]. One-dimensional simulations are presented for a short-wavelength (∼10 μm) amplifier with a quadratically tapered wiggler. For pre-bunched electrons with a phase-spread in the range (1/3-1/2) mod 2π and thermal spread in the range (0.5-1)%, the extraction efficiency lies in the range (50-33)%.",

author = "J. Chen and A. Bhattacharjee",

year = "1996",

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doi = "10.1016/0168-9002(95)01360-1",

language = "English (US)",

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issn = "0168-9002",

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T1 - Sideband elimination and high efficiencies in a strongly tapered free-electron laser amplifier

AU - Chen, J.

AU - Bhattacharjee, A.

PY - 1996/6/11

Y1 - 1996/6/11

N2 - It is demonstrated by numerical simulation that strongly tapered free-electron laser amplifiers exhibit negligible sideband growth, consistent with the predictions of a recent analytical theory [R.P. Pilla and A. Bhattacharjee, Phys. Plasma 1 (1994) 390]. One-dimensional simulations are presented for a short-wavelength (∼10 μm) amplifier with a quadratically tapered wiggler. For pre-bunched electrons with a phase-spread in the range (1/3-1/2) mod 2π and thermal spread in the range (0.5-1)%, the extraction efficiency lies in the range (50-33)%.

AB - It is demonstrated by numerical simulation that strongly tapered free-electron laser amplifiers exhibit negligible sideband growth, consistent with the predictions of a recent analytical theory [R.P. Pilla and A. Bhattacharjee, Phys. Plasma 1 (1994) 390]. One-dimensional simulations are presented for a short-wavelength (∼10 μm) amplifier with a quadratically tapered wiggler. For pre-bunched electrons with a phase-spread in the range (1/3-1/2) mod 2π and thermal spread in the range (0.5-1)%, the extraction efficiency lies in the range (50-33)%.

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VL - 375

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-3

ER -

Sideband elimination and high efficiencies in a strongly tapered free-electron laser amplifier

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