Si1-x-y/GexCy alloys: An enabling technology for scaled high performance silicon-based heterojunction devices

J. C. Sturm, M. Yang, M. S. Carroll, C. L. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Si/Si1-xGex heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si1-x-y/GexCy alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.

Original languageEnglish (US)
Title of host publication1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
EditorsSammy Kayali
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3-9
Number of pages7
ISBN (Electronic)0780352882, 9780780352889
DOIs
StatePublished - Jan 1 1998
Event1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States
Duration: Sep 18 1998Sep 18 1998

Publication series

Name1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Volume1998-September

Other

Other1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
CountryUnited States
CityAnn Arbor
Period9/18/989/18/98

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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  • Cite this

    Sturm, J. C., Yang, M., Carroll, M. S., & Chang, C. L. (1998). Si1-x-y/GexCy alloys: An enabling technology for scaled high performance silicon-based heterojunction devices. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (pp. 3-9). [750168] (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750168