Si1-x-y/GexCy alloys: An enabling technology for scaled high performance silicon-based heterojunction devices

J. C. Sturm; M. Yang; M. S. Carroll; C. L. Chang

doi:10.1109/SMIC.1998.750168

Si_1-x-y/Ge_xC_y alloys: An enabling technology for scaled high performance silicon-based heterojunction devices

J. C. Sturm, M. Yang, M. S. Carroll, C. L. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Si/Si_1-xGe_x heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si_1-x-y/Ge_xC_y alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.

Original language	English (US)
Title of host publication	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Editors	Sammy Kayali
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3-9
Number of pages	7
ISBN (Electronic)	0780352882, 9780780352889
DOIs	https://doi.org/10.1109/SMIC.1998.750168
State	Published - 1998
Event	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: Sep 18 1998 → Sep 18 1998

Publication series

Name	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Volume	1998-September

Other

Other	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Country/Territory	United States
City	Ann Arbor
Period	9/18/98 → 9/18/98

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/SMIC.1998.750168

Cite this

Sturm, J. C., Yang, M., Carroll, M. S., & Chang, C. L. (1998). Si_1-x-y/Ge_xC_y alloys: An enabling technology for scaled high performance silicon-based heterojunction devices. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (pp. 3-9). Article 750168 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750168

Sturm, J. C. ; Yang, M. ; Carroll, M. S. et al. / Si_1-x-y/Ge_xC_y alloys : An enabling technology for scaled high performance silicon-based heterojunction devices. 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. editor / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 3-9 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998).

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title = "Si1-x-y/GexCy alloys: An enabling technology for scaled high performance silicon-based heterojunction devices",

abstract = "Si/Si1-xGex heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si1-x-y/GexCy alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.",

author = "Sturm, {J. C.} and M. Yang and Carroll, {M. S.} and Chang, {C. L.}",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 ; Conference date: 18-09-1998 Through 18-09-1998",

year = "1998",

doi = "10.1109/SMIC.1998.750168",

language = "English (US)",

series = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3--9",

editor = "Sammy Kayali",

booktitle = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",

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}

Sturm, JC, Yang, M, Carroll, MS & Chang, CL 1998, Si_1-x-y/Ge_xC_y alloys: An enabling technology for scaled high performance silicon-based heterojunction devices. in S Kayali (ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998., 750168, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998, vol. 1998-September, Institute of Electrical and Electronics Engineers Inc., pp. 3-9, 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998, Ann Arbor, United States, 9/18/98. https://doi.org/10.1109/SMIC.1998.750168

Si_1-x-y/Ge_xC_y alloys: An enabling technology for scaled high performance silicon-based heterojunction devices. / Sturm, J. C.; Yang, M.; Carroll, M. S. et al.
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 1998. p. 3-9 750168 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Si/Si1-xGex heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si1-x-y/GexCy alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.

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Sturm JC, Yang M, Carroll MS, Chang CL. Si_1-x-y/Ge_xC_y alloys: An enabling technology for scaled high performance silicon-based heterojunction devices. In Kayali S, editor, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 3-9. 750168. (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998). doi: 10.1109/SMIC.1998.750168