Si-on-insulator films of high crystal perfection by zone melting under a SiO2 cap provided with vent openings

Loren Pfeiffer; T. Kovacs; K. W. West

doi:10.1063/1.96247

Si-on-insulator films of high crystal perfection by zone melting under a SiO₂ cap provided with vent openings

Loren Pfeiffer
, T. Kovacs
, K. W. West

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO₂ capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO₂ in the molten Si before recrystallization.

Original language	English (US)
Pages (from-to)	157-159
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	2
DOIs	https://doi.org/10.1063/1.96247
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.96247

Cite this

@article{2a4e08dd4db946ceb9485d13eef9a13e,

title = "Si-on-insulator films of high crystal perfection by zone melting under a SiO2 cap provided with vent openings",

abstract = "We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO2 capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO2 in the molten Si before recrystallization.",

author = "Loren Pfeiffer and T. Kovacs and West, \{K. W.\}",

year = "1985",

doi = "10.1063/1.96247",

language = "English (US)",

volume = "47",

pages = "157--159",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Si-on-insulator films of high crystal perfection by zone melting under a SiO2 cap provided with vent openings

AU - Pfeiffer, Loren

AU - Kovacs, T.

AU - West, K. W.

PY - 1985

Y1 - 1985

N2 - We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO2 capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO2 in the molten Si before recrystallization.

AB - We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO2 capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO2 in the molten Si before recrystallization.

UR - https://www.scopus.com/pages/publications/36549101870

UR - https://www.scopus.com/pages/publications/36549101870#tab=citedBy

U2 - 10.1063/1.96247

DO - 10.1063/1.96247

M3 - Article

AN - SCOPUS:36549101870

SN - 0003-6951

VL - 47

SP - 157

EP - 159

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Si-on-insulator films of high crystal perfection by zone melting under a SiO₂ cap provided with vent openings

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this