Abstract
We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO2 capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO2 in the molten Si before recrystallization.
Original language | English (US) |
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Pages (from-to) | 157-159 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 47 |
Issue number | 2 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)