Si-on-insulator films of high crystal perfection by zone melting under a SiO2 cap provided with vent openings

Loren Pfeiffer, T. Kovacs, K. W. West

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO2 capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO2 in the molten Si before recrystallization.

Original languageEnglish (US)
Pages (from-to)157-159
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number2
DOIs
StatePublished - 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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