Si δ-doping of 〈011〉-oriented GaAs and Al _xGa_1-xAs grown by molecular-beam epitaxy

Keyphrases

• Gallium Arsenide 100%
• Molecular Beam Epitaxy 100%
• AlxGa1-xN 100%
• Si Doping 100%
• Electron Mobility 66%
• Oriented Samples 66%
• Annealing 33%
• Electrical Activity 33%
• Secondary Ion Mass Spectrometry 33%
• Hall Measurement 33%
• As-grown 33%
• GaAs Heterostructures 33%
• Silicon Doping 33%
• Doping Efficiency 33%
• Spacer Thickness 33%
• Si Impurity 33%

Material Science

• Gallium Arsenide 100%
• Molecular Beam Epitaxy 100%
• Electron Mobility 66%
• Heterojunction 33%
• Silicon 33%
• Secondary Ion Mass Spectrometry 33%