Shubnikov-deHaas oscillations around v = 1 2 Landau level filling factor

R. R. Du; H. L. Stormer; D. C. Tsui; L. N. Pfeiffer; K. W. West

doi:10.1016/0038-1098(94)90934-2

Shubnikov-deHaas oscillations around v = 1 2 Landau level filling factor

R. R. Du, H. L. Stormer, D. C. Tsui, L. N. Pfeiffer, K. W. West

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Abstract

We analyze the magneto-resistance due to the higher-order fractional quantum Hall effect (FQHE) around v = 1 2 Landau level filling factor within the standard framework of Shubnikov-deHaas oscillations adopting v = 1 2 as the new origin for an effective magnetic field, B_eff, and find it readily applicable. We deduce ad hoc effective masses, and scattering rates from our analysis. The masses are approximately constant and exceed the electron mass in GaAs by about a factor of 10. Our successful analysis of the FQHE features, in terms of this conventional tool for electron magneto-transport, further strengthens the case for the existence of exotic new particles in the FQHE.

Original language	English (US)
Pages (from-to)	71-75
Number of pages	5
Journal	Solid State Communications
Volume	90
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(94)90934-2
State	Published - Apr 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(94)90934-2

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title = "Shubnikov-deHaas oscillations around v = 1 2 Landau level filling factor",

abstract = "We analyze the magneto-resistance due to the higher-order fractional quantum Hall effect (FQHE) around v = 1 2 Landau level filling factor within the standard framework of Shubnikov-deHaas oscillations adopting v = 1 2 as the new origin for an effective magnetic field, Beff, and find it readily applicable. We deduce ad hoc effective masses, and scattering rates from our analysis. The masses are approximately constant and exceed the electron mass in GaAs by about a factor of 10. Our successful analysis of the FQHE features, in terms of this conventional tool for electron magneto-transport, further strengthens the case for the existence of exotic new particles in the FQHE.",

author = "Du, {R. R.} and Stormer, {H. L.} and Tsui, {D. C.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "1994",

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doi = "10.1016/0038-1098(94)90934-2",

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T1 - Shubnikov-deHaas oscillations around v = 1 2 Landau level filling factor

AU - Du, R. R.

AU - Stormer, H. L.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1994/4

Y1 - 1994/4

N2 - We analyze the magneto-resistance due to the higher-order fractional quantum Hall effect (FQHE) around v = 1 2 Landau level filling factor within the standard framework of Shubnikov-deHaas oscillations adopting v = 1 2 as the new origin for an effective magnetic field, Beff, and find it readily applicable. We deduce ad hoc effective masses, and scattering rates from our analysis. The masses are approximately constant and exceed the electron mass in GaAs by about a factor of 10. Our successful analysis of the FQHE features, in terms of this conventional tool for electron magneto-transport, further strengthens the case for the existence of exotic new particles in the FQHE.

AB - We analyze the magneto-resistance due to the higher-order fractional quantum Hall effect (FQHE) around v = 1 2 Landau level filling factor within the standard framework of Shubnikov-deHaas oscillations adopting v = 1 2 as the new origin for an effective magnetic field, Beff, and find it readily applicable. We deduce ad hoc effective masses, and scattering rates from our analysis. The masses are approximately constant and exceed the electron mass in GaAs by about a factor of 10. Our successful analysis of the FQHE features, in terms of this conventional tool for electron magneto-transport, further strengthens the case for the existence of exotic new particles in the FQHE.

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DO - 10.1016/0038-1098(94)90934-2

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EP - 75

JO - Solid State Communications

JF - Solid State Communications

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ER -

Shubnikov-deHaas oscillations around v = 1 2 Landau level filling factor

Abstract

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