Abstract
We have used far-infrared absorption to probe the optical conductivity of metallic GaAs:Si sheets imbedded in GaAs by molecular-beam epitaxy. An enhancement of the conductivity is observed at short length scales which we attribute to localization and Coulomb-interaction effects. However, the spectra do not appear to be quantitatively described by existing theories for long length scales.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7329-7331 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 33 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1986 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics