We have used far-infrared absorption to probe the optical conductivity of metallic GaAs:Si sheets imbedded in GaAs by molecular-beam epitaxy. An enhancement of the conductivity is observed at short length scales which we attribute to localization and Coulomb-interaction effects. However, the spectra do not appear to be quantitatively described by existing theories for long length scales.
|Original language||English (US)|
|Number of pages||3|
|Journal||Physical Review B|
|State||Published - Jan 1 1986|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics