Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates

K. Long, H. Gleskova, S. Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiNx buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages89-90
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates'. Together they form a unique fingerprint.

Cite this