Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates

K. Long; H. Gleskova; S. Wagner; J. C. Sturm

doi:10.1109/DRC.2004.1367797

Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates

K. Long, H. Gleskova, S. Wagner, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN_x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	89-90
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367797
State	Published - 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

All Science Journal Classification (ASJC) codes

General Engineering

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10.1109/DRC.2004.1367797

Cite this

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title = "Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates",

abstract = "The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiNx buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.",

author = "K. Long and H. Gleskova and S. Wagner and Sturm, {J. C.}",

year = "2004",

doi = "10.1109/DRC.2004.1367797",

language = "English (US)",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "89--90",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Long, K, Gleskova, H, Wagner, S & Sturm, JC 2004, Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates. in Device Research Conference - Conference Digest, 62nd DRC., III.-19, Device Research Conference - Conference Digest, DRC, pp. 89-90, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367797

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T1 - Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates

AU - Long, K.

AU - Gleskova, H.

AU - Wagner, S.

AU - Sturm, J. C.

PY - 2004

Y1 - 2004

N2 - The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiNx buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

AB - The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiNx buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

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T3 - Device Research Conference - Conference Digest, DRC

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BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

Short channel amorphous-silicon TFT's on high-temperature clear plastic substrates

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