Abstract
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value min in bulk crystals of P-doped Si. Conductivities below min increase by over 103 as the density is raised by less than 1%, and do not rule out a discontinuous transition. However, over a wider density range the data can be fitted with a scaling form with a characteristic length that tends to diverge with the same exponent in the metal and insulator.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1723-1726 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 45 |
| Issue number | 21 |
| DOIs | |
| State | Published - 1980 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy