Abstract
A review is given of our current understanding of the interactions between shallow impurities in semiconductors at intermediate concentrations, particularly as seen through optical (far-infrared), dielectric and magnetic properties. Interpreted in terms of models appropriate for the non-metallic phase, these results point out the importance of randomness in the dopant distribution. Connection with the recent scaling approach to the metal-insulator transition, based on perturbative expansions about the high density metallic (weak-coupling) limit, is discussed.
Original language | English (US) |
---|---|
Pages (from-to) | 99-111 |
Number of pages | 13 |
Journal | Physica B+C |
Volume | 146 |
Issue number | 1-2 |
DOIs | |
State | Published - Sep 1987 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering