TY - JOUR
T1 - Shallow impurity interactions and the metal-insulator transition
AU - Bhatt, R. N.
PY - 1987/1/1
Y1 - 1987/1/1
N2 - A review is given of our current understanding of the interactions between shallow impurities in semiconductors at intermediate concentrations, particularly as seen through optical (far-infrared), dielectric and magnetic properties. Interpreted in terms of models appropriate for the non-metallic phase, these results point out the importance of randomness in the dopant distribution. Connection with the recent scaling approach to the metal-insulator transition, based on perturbative expansions about the high density metallic (weak-coupling) limit, is discussed.
AB - A review is given of our current understanding of the interactions between shallow impurities in semiconductors at intermediate concentrations, particularly as seen through optical (far-infrared), dielectric and magnetic properties. Interpreted in terms of models appropriate for the non-metallic phase, these results point out the importance of randomness in the dopant distribution. Connection with the recent scaling approach to the metal-insulator transition, based on perturbative expansions about the high density metallic (weak-coupling) limit, is discussed.
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U2 - 10.1016/0378-4363(87)90055-6
DO - 10.1016/0378-4363(87)90055-6
M3 - Article
AN - SCOPUS:0002525915
SN - 0378-4363
VL - 146
SP - 99
EP - 111
JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
IS - 1-2
ER -