Shallow impurity interactions and the metal-insulator transition

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A review is given of our current understanding of the interactions between shallow impurities in semiconductors at intermediate concentrations, particularly as seen through optical (far-infrared), dielectric and magnetic properties. Interpreted in terms of models appropriate for the non-metallic phase, these results point out the importance of randomness in the dopant distribution. Connection with the recent scaling approach to the metal-insulator transition, based on perturbative expansions about the high density metallic (weak-coupling) limit, is discussed.

Original languageEnglish (US)
Pages (from-to)99-111
Number of pages13
JournalPhysica B+C
Issue number1-2
StatePublished - Sep 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering


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