Separately contacted electron-hole double layer in a GaAs/Al xGa1-xAs heterostructure

B. E. Kane; J. P. Eisenstein; W. Wegscheider; L. N. Pfeiffer; K. W. West

doi:10.1063/1.112432

Separately contacted electron-hole double layer in a GaAs/Al _xGa_1-xAs heterostructure

B. E. Kane
, J. P. Eisenstein
, W. Wegscheider
, L. N. Pfeiffer
, K. W. West

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide Al_xGa_1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10¹⁰/cm² to greater than 10¹¹/cm².

Original language	English (US)
Pages (from-to)	3266-3268
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	25
DOIs	https://doi.org/10.1063/1.112432
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.112432

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title = "Separately contacted electron-hole double layer in a GaAs/Al xGa1-xAs heterostructure",

abstract = "We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 {\AA} GaAs wells separated by a 200 {\AA} wide AlxGa1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.",

author = "Kane, \{B. E.\} and Eisenstein, \{J. P.\} and W. Wegscheider and Pfeiffer, \{L. N.\} and West, \{K. W.\}",

year = "1994",

doi = "10.1063/1.112432",

language = "English (US)",

volume = "65",

pages = "3266--3268",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

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T1 - Separately contacted electron-hole double layer in a GaAs/Al xGa1-xAs heterostructure

AU - Kane, B. E.

AU - Eisenstein, J. P.

AU - Wegscheider, W.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1994

Y1 - 1994

N2 - We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.

AB - We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.

UR - https://www.scopus.com/pages/publications/36449002333

UR - https://www.scopus.com/pages/publications/36449002333#tab=citedBy

U2 - 10.1063/1.112432

DO - 10.1063/1.112432

M3 - Article

AN - SCOPUS:36449002333

SN - 0003-6951

VL - 65

SP - 3266

EP - 3268

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Separately contacted electron-hole double layer in a GaAs/Al _xGa_1-xAs heterostructure

Abstract

All Science Journal Classification (ASJC) codes

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