Abstract
We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.
Original language | English (US) |
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Pages (from-to) | 3266-3268 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 25 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)