Separately contacted electron-hole double layer in a GaAs/Al xGa1-xAs heterostructure

B. E. Kane, J. P. Eisenstein, W. Wegscheider, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.

Original languageEnglish (US)
Pages (from-to)3266-3268
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number25
DOIs
StatePublished - 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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