Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

M. M. Feldman; G. Fuchs; T. Liu; L. A. D’Imperio; M. D. Henry; E. A. Shaner; S. A. Lyon

doi:10.1007/s10909-024-03256-1

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

M. M. Feldman
, G. Fuchs
, T. Liu
, L. A. D’Imperio
, M. D. Henry
, E. A. Shaner
, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

Abstract

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of ∼ 2eHz at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

Original language	English (US)
Pages (from-to)	242-251
Number of pages	10
Journal	Journal of Low Temperature Physics
Volume	219
Issue number	5
DOIs	https://doi.org/10.1007/s10909-024-03256-1
State	Published - Jun 2025
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Keywords

Charge-Coupled Devices
Electrons on Helium
High-Electron-Mobility Transistors
Single-Electron Sensing

Access to Document

10.1007/s10909-024-03256-1

Cite this

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title = "Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors",

abstract = "We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of ∼ 2eHz at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.",

keywords = "Charge-Coupled Devices, Electrons on Helium, High-Electron-Mobility Transistors, Single-Electron Sensing",

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note = "Publisher Copyright: {\textcopyright} The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.",

year = "2025",

month = jun,

doi = "10.1007/s10909-024-03256-1",

language = "English (US)",

volume = "219",

pages = "242--251",

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T1 - Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

AU - Feldman, M. M.

AU - Fuchs, G.

AU - Liu, T.

AU - D’Imperio, L. A.

AU - Henry, M. D.

AU - Shaner, E. A.

AU - Lyon, S. A.

N1 - Publisher Copyright: © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.

PY - 2025/6

Y1 - 2025/6

N2 - We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of ∼ 2eHz at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

AB - We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of ∼ 2eHz at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

KW - Charge-Coupled Devices

KW - Electrons on Helium

KW - High-Electron-Mobility Transistors

KW - Single-Electron Sensing

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UR - https://www.scopus.com/pages/publications/85217194817#tab=citedBy

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DO - 10.1007/s10909-024-03256-1

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JO - Journal of Low Temperature Physics

JF - Journal of Low Temperature Physics

IS - 5

ER -

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

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