Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition

P. V. Schwartz, C. W. Liu, J. C. Sturm

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline silicon films grown by chemical vapor deposition. The films contain oxygen concentrations that exceed the peak solid solubility of oxygen in silicon by several orders of magnitude, yet they remain crystalline. The resistivities of these films reach levels of 106 Ω cm at room temperature and the electronic properties of the films exhibit classical characteristics of space-charge-limited current associated with insulators containing trap states within the band gap. We then demonstrate that metal-oxide-semiconductor transistors with bulk-like mobilities can be fabricated in crystalline silicon layers grown without oxygen on top of the semi-insulating films.

Original languageEnglish (US)
Pages (from-to)1102-1104
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number10
DOIs
StatePublished - Dec 1 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this