Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition

P. V. Schwartz; C. W. Liu; J. C. Sturm

doi:10.1063/1.108755

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition

P. V. Schwartz, C. W. Liu, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline silicon films grown by chemical vapor deposition. The films contain oxygen concentrations that exceed the peak solid solubility of oxygen in silicon by several orders of magnitude, yet they remain crystalline. The resistivities of these films reach levels of 10⁶ Ω cm at room temperature and the electronic properties of the films exhibit classical characteristics of space-charge-limited current associated with insulators containing trap states within the band gap. We then demonstrate that metal-oxide-semiconductor transistors with bulk-like mobilities can be fabricated in crystalline silicon layers grown without oxygen on top of the semi-insulating films.

Original language	English (US)
Pages (from-to)	1102-1104
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	10
DOIs	https://doi.org/10.1063/1.108755
State	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.108755

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abstract = "In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline silicon films grown by chemical vapor deposition. The films contain oxygen concentrations that exceed the peak solid solubility of oxygen in silicon by several orders of magnitude, yet they remain crystalline. The resistivities of these films reach levels of 106 Ω cm at room temperature and the electronic properties of the films exhibit classical characteristics of space-charge-limited current associated with insulators containing trap states within the band gap. We then demonstrate that metal-oxide-semiconductor transistors with bulk-like mobilities can be fabricated in crystalline silicon layers grown without oxygen on top of the semi-insulating films.",

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AU - Liu, C. W.

AU - Sturm, J. C.

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N2 - In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline silicon films grown by chemical vapor deposition. The films contain oxygen concentrations that exceed the peak solid solubility of oxygen in silicon by several orders of magnitude, yet they remain crystalline. The resistivities of these films reach levels of 106 Ω cm at room temperature and the electronic properties of the films exhibit classical characteristics of space-charge-limited current associated with insulators containing trap states within the band gap. We then demonstrate that metal-oxide-semiconductor transistors with bulk-like mobilities can be fabricated in crystalline silicon layers grown without oxygen on top of the semi-insulating films.

AB - In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline silicon films grown by chemical vapor deposition. The films contain oxygen concentrations that exceed the peak solid solubility of oxygen in silicon by several orders of magnitude, yet they remain crystalline. The resistivities of these films reach levels of 106 Ω cm at room temperature and the electronic properties of the films exhibit classical characteristics of space-charge-limited current associated with insulators containing trap states within the band gap. We then demonstrate that metal-oxide-semiconductor transistors with bulk-like mobilities can be fabricated in crystalline silicon layers grown without oxygen on top of the semi-insulating films.

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Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition

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