Self-passivated copper gates for thin film silicon transistors

H. Sirringhaus, S. D. Theiss, Antoine Kahn, S. Wagner

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

A solution to the thin film silicon transistor gate metallization problem in active matrix liquid crystal displays is demonstrated in the form of a self-passivation process for copper. Bottom-level copper (Cu) lines are passivated by a self-aligned CrOx encapsulation formed by surface segregation of chromium (Cr) from dilute Cu1-xCrx alloys (x = 0.1-0.3) at 400 °C. The encapsulation is an efficient barrier for Cu diffusion into the SiNx gate insulator during the plasma deposition and transistor processing, and solves the problems of oxidation and adhesion to the glass substrate. Gate line resistivities are 4.5 to 7.5 μΩcm depending on the initial Cr concentration. The performance of self-passivated Cu-gate thin film transistors is comparable to that of transistors with refractory metal gates.

Original languageEnglish (US)
Pages (from-to)59-64
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume446
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 4 1996

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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