Self-passivated copper gates for amorphous silicon thin film transistors

Keyphrases

• Amorphous Silicon Thin-film Transistors 100%
• Self-passivation 100%
• Copper Gate 100%
• Transistor 66%
• Resistivity 33%
• Thin-film Transistors 33%
• Passivated 33%
• Adhesion 33%
• Self-aligned 33%
• Chromium 33%
• Surface Segregation 33%
• Metallization 33%
• SiNx 33%
• Gate Insulator 33%
• Glass Substrate 33%
• Manufacturing Process 33%
• Passivation Effect 33%
• Silicon Transistor 33%
• Chromium Oxide 33%
• Thin-film Silicon 33%
• Cu Line 33%
• Plasma Deposition 33%
• Refractory Metal Gate 33%
• Self-performance 33%
• Active-matrix Liquid-crystal Display 33%
• Cu Diffusion 33%

Material Science

• Transistor 100%
• Thin-Film Transistor 100%
• Amorphous Silicon 100%
• Chromium 66%
• Silicon 33%
• Oxidation Reaction 33%
• Electrical Resistivity 33%
• Oxide Compound 33%
• Thin Films 33%
• Refractory Metal 33%
• Plasma Deposition 33%
• Liquid Crystal Display 33%

Engineering

• Thin-Film Transistor 100%
• Passivation 50%
• Thin Films 50%
• Metallizations 50%
• Film Silicon 50%
• Glass Substrate 50%
• Manufacturing Process 50%
• Liquid Crystal Display 50%
• Copper (Cu) 50%
• Metal Gate 50%