Self-passivated copper gates for amorphous silicon thin film transistors

Henning Sirringhaus, Antoine Kahn, Sigurd Wagner

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


A solution to the thin film silicon transistor gate metallization problem in active matrix liquid crystal displays is demonstrated in the form of a self-passivation process for copper. Bottom-level copper (Cu) lines are passivated by a self-aligned chromium oxide encapsulation formed by surface segregation of chromium (Cr) from dilute Cu1-xCrx alloys at 400 degrees C. The encapsulation is an efficient barrier for Cu diffusion into the SiNx gate insulator during the plasma deposition and transistor processing, and solves the problems of oxidation and adhesion to the glass substrate without introducing additional mask steps into the manufacturing process. Gate line resistivities of 4.5 μΩcm are obtained. The performance of self-passivated Cu-gate thin film transistors is comparable to that of transistors with refractory metal gates.

Original languageEnglish (US)
Pages (from-to)62-69
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1997
EventActive Matrix Liquid Crystal Displays Technology and Applications - San Jose, CA, United States
Duration: Feb 10 1997Feb 10 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


  • Active matrix liquid crystal displays
  • Copper
  • Gate metallization
  • Thin film transistors


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