A solution to the amorphous silicon transistor gate metallization problem in active matrix liquid crystal displays (AMLCD's) is demonstrated, in the form of a self-passivated copper (Cu) process. Cu is passivated by a self-aligned chromium (Cr) oxide encapsulation formed by surface segregation of Cr in dilute Cu-10-30at.%Cr alloys at 400 °C, solving the problems of chemical reactivity during the plasma deposition, diffusion, poor adhesion to the substrate, and oxidation. The performance of selfpassivated Cu bottom-gate thin-film transistors (TFT's) and their stability during thermal bias stress testing is comparable to that of Cr-gate reference TFT's. The gate line resistivity (including encapsulation) is 4.5 μΩ·cm at present.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Aug 1997|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering