Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications

Yoni Mehlman; Yasmin Afsar; Naveen Yerma; Sigurd Wagner; James C. Sturm

doi:10.1109/DRC.2017.7999510

Self-aligned ZnO thin-film transistors with 860 MHz f_T and 2 GHz f_max for large-area applications

Yoni Mehlman, Yasmin Afsar, Naveen Yerma, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

High-frequency thin film transistors (TFTs) enable many important thin film circuits used in flexible large-area systems such as large bandwidth instrumentation amplifiers (related to f_T) and high-frequency oscillators (related to f_max) [1,2]. In [3] f_max=10GHz and f_T=2.9GHz were reported but using Si substrates and pulsed laser deposition for ZnO growth, which are incompatible with low-cost large-area processing on a meter scale. More modest reports of f_max-=1GHz with sputtered IGZO on glass have relied on a very sensitive alignment process, impractical for fabrication over large substrates [4]. In this work we present a ZnO-channel TFT process fully compatible with flexible large-area substrates. We achieve an f_max=2GHz and f_T=860MHz by reducing source/drain (S/D) to gate overlaps (X_ov) and scaling channel lengths down to 500nm via a self-aligned process.

Original language	English (US)
Title of host publication	75th Annual Device Research Conference, DRC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509063277
DOIs	https://doi.org/10.1109/DRC.2017.7999510
State	Published - Aug 1 2017
Event	75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: Jun 25 2017 → Jun 28 2017

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	75th Annual Device Research Conference, DRC 2017
Country/Territory	United States
City	South Bend
Period	6/25/17 → 6/28/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2017.7999510

Cite this

Mehlman, Y., Afsar, Y., Yerma, N., Wagner, S., & Sturm, J. C. (2017). Self-aligned ZnO thin-film transistors with 860 MHz f_T and 2 GHz f_max for large-area applications. In 75th Annual Device Research Conference, DRC 2017 Article 7999510 (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999510

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abstract = "High-frequency thin film transistors (TFTs) enable many important thin film circuits used in flexible large-area systems such as large bandwidth instrumentation amplifiers (related to fT) and high-frequency oscillators (related to fmax) [1,2]. In [3] fmax=10GHz and fT=2.9GHz were reported but using Si substrates and pulsed laser deposition for ZnO growth, which are incompatible with low-cost large-area processing on a meter scale. More modest reports of fmax-=1GHz with sputtered IGZO on glass have relied on a very sensitive alignment process, impractical for fabrication over large substrates [4]. In this work we present a ZnO-channel TFT process fully compatible with flexible large-area substrates. We achieve an fmax=2GHz and fT=860MHz by reducing source/drain (S/D) to gate overlaps (Xov) and scaling channel lengths down to 500nm via a self-aligned process.",

author = "Yoni Mehlman and Yasmin Afsar and Naveen Yerma and Sigurd Wagner and Sturm, {James C.}",

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Mehlman, Y, Afsar, Y, Yerma, N, Wagner, S & Sturm, JC 2017, Self-aligned ZnO thin-film transistors with 860 MHz f_T and 2 GHz f_max for large-area applications. in 75th Annual Device Research Conference, DRC 2017., 7999510, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 6/25/17. https://doi.org/10.1109/DRC.2017.7999510

Self-aligned ZnO thin-film transistors with 860 MHz f_T and 2 GHz f_max for large-area applications. / Mehlman, Yoni; Afsar, Yasmin; Yerma, Naveen et al.
75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999510 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Mehlman, Yoni

AU - Afsar, Yasmin

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AU - Wagner, Sigurd

AU - Sturm, James C.

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N2 - High-frequency thin film transistors (TFTs) enable many important thin film circuits used in flexible large-area systems such as large bandwidth instrumentation amplifiers (related to fT) and high-frequency oscillators (related to fmax) [1,2]. In [3] fmax=10GHz and fT=2.9GHz were reported but using Si substrates and pulsed laser deposition for ZnO growth, which are incompatible with low-cost large-area processing on a meter scale. More modest reports of fmax-=1GHz with sputtered IGZO on glass have relied on a very sensitive alignment process, impractical for fabrication over large substrates [4]. In this work we present a ZnO-channel TFT process fully compatible with flexible large-area substrates. We achieve an fmax=2GHz and fT=860MHz by reducing source/drain (S/D) to gate overlaps (Xov) and scaling channel lengths down to 500nm via a self-aligned process.

AB - High-frequency thin film transistors (TFTs) enable many important thin film circuits used in flexible large-area systems such as large bandwidth instrumentation amplifiers (related to fT) and high-frequency oscillators (related to fmax) [1,2]. In [3] fmax=10GHz and fT=2.9GHz were reported but using Si substrates and pulsed laser deposition for ZnO growth, which are incompatible with low-cost large-area processing on a meter scale. More modest reports of fmax-=1GHz with sputtered IGZO on glass have relied on a very sensitive alignment process, impractical for fabrication over large substrates [4]. In this work we present a ZnO-channel TFT process fully compatible with flexible large-area substrates. We achieve an fmax=2GHz and fT=860MHz by reducing source/drain (S/D) to gate overlaps (Xov) and scaling channel lengths down to 500nm via a self-aligned process.

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