@inproceedings{61e31af113884bda8537a32c5f2f6ab0,
title = "Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications",
abstract = "High-frequency thin film transistors (TFTs) enable many important thin film circuits used in flexible large-area systems such as large bandwidth instrumentation amplifiers (related to fT) and high-frequency oscillators (related to fmax) [1,2]. In [3] fmax=10GHz and fT=2.9GHz were reported but using Si substrates and pulsed laser deposition for ZnO growth, which are incompatible with low-cost large-area processing on a meter scale. More modest reports of fmax-=1GHz with sputtered IGZO on glass have relied on a very sensitive alignment process, impractical for fabrication over large substrates [4]. In this work we present a ZnO-channel TFT process fully compatible with flexible large-area substrates. We achieve an fmax=2GHz and fT=860MHz by reducing source/drain (S/D) to gate overlaps (Xov) and scaling channel lengths down to 500nm via a self-aligned process.",
author = "Yoni Mehlman and Yasmin Afsar and Naveen Yerma and Sigurd Wagner and Sturm, {James C.}",
note = "Funding Information: This work was supported by the Princeton program in Plasma Science and Technology and FlexTech/ARL Publisher Copyright: {\textcopyright} 2017 IEEE.; 75th Annual Device Research Conference, DRC 2017 ; Conference date: 25-06-2017 Through 28-06-2017",
year = "2017",
month = aug,
day = "1",
doi = "10.1109/DRC.2017.7999510",
language = "English (US)",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "75th Annual Device Research Conference, DRC 2017",
address = "United States",
}