Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications

Yoni Mehlman, Yasmin Afsar, Naveen Yerma, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations


High-frequency thin film transistors (TFTs) enable many important thin film circuits used in flexible large-area systems such as large bandwidth instrumentation amplifiers (related to fT) and high-frequency oscillators (related to fmax) [1,2]. In [3] fmax=10GHz and fT=2.9GHz were reported but using Si substrates and pulsed laser deposition for ZnO growth, which are incompatible with low-cost large-area processing on a meter scale. More modest reports of fmax-=1GHz with sputtered IGZO on glass have relied on a very sensitive alignment process, impractical for fabrication over large substrates [4]. In this work we present a ZnO-channel TFT process fully compatible with flexible large-area substrates. We achieve an fmax=2GHz and fT=860MHz by reducing source/drain (S/D) to gate overlaps (Xov) and scaling channel lengths down to 500nm via a self-aligned process.

Original languageEnglish (US)
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
StatePublished - Aug 1 2017
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: Jun 25 2017Jun 28 2017

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other75th Annual Device Research Conference, DRC 2017
Country/TerritoryUnited States
CitySouth Bend

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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