Self-aligned top-gate coplanar a-Si:H thin-film transistors with a SiO 2silicone hybrid gate dielectric

Lin Han, Yifei Huang, James C. Sturm, Sigurd Wagner

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have made self-aligned top-gate coplanar hydrogenated amorphous-silicon (a-Si:H) thin-film transistors using a SiO2 silicone hybrid material as the gate dielectric. The hybrid dielectric layer is 150 nm thick and separates a chromium gate electrode from nickel silicide source and drain. The nickel silicide is formed by rapid thermal reaction of a deposited nickel film with the underlying a-Si:H. The electron field-effect mobility is ∼1.0 cm2V̇ s, the subthreshold slope is ∼380 mV/decade, and the on/ off current ratio is ∼105. The gate leakage current of ∼ 10 pA across the 150-nm-thick hybrid dielectric is ∼1/10 of that observed across the typical 300-nm-thick &SiNx dielectric. The whole process needs only two masks.

Original languageEnglish (US)
Article number5629427
Pages (from-to)36-38
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number1
DOIs
StatePublished - Jan 1 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Amorphous silicon (a-Si:H)
  • SiO silicone hybrid
  • coplanar top-gate thin-film transistor (TFT)
  • plasma-enhanced chemical vapor deposition (PE-CVD)

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